专利名称：Silicon-on-insulator (SOI) semiconductor
device and method of making the same
发明人：John Burt McKitterick申请号：US08/861189申请日：19970521公开号：US05789781A公开日：19980804
摘要：An improved Silicon-On-Insulator (SOI) semiconductor device having a first andsecond asymmetric transistor, each having a source, a body, a gate, and a drain. Therespective gates and drains of the asymmetric transistors are connected together suchthat a transistor pair is formed which is operable as a single symmetric transistor. AnNMOS transistor pair may be connected in parallel with a PMOS transistor pair so as toform a symmetric Pass Gate.
申请人：ALLIEDSIGNAL INC.
代理人：Howard G. Massung,Verne E. Kreger, Jr.
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