Integrated memory device

专利名称：Integrated memory device发明人：LE, THOAI-THAI,LINDOLF, JUERGEN,

DR.,SCHNEIDER, HELMUT

申请号：EP99118399.7申请日：19990916公开号：EP0989565A1公开日：20000329

专利附图：

摘要：An integrated memory/store includes storage or memory cells for storage ofinformation and which are arranged in a matrix of cells at the crossing points of the bit-lines (BL) and the word lines (WL). A word-line decoder (WLDEC) is used to address the

word-lines, and at least one evaluating unit (SA) is provided for assessing the informationread from the memory cells (MC) on to the bit-lines (BL), and is provided with anactivating input. A logic unit (OR) carries out an OR-function with the inputs which areconnected to the end of each word-line facing away from the word-line decoder (WLDEC),and has an output which is connected to the activating input of the evaluating unit (SA).

申请人：SIEMENS AKTIENGESELLSCHAFT

地址：Wittelsbacherplatz 2 80333 München DE

国籍：DE

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