专利名称：Method for forming conductive layer and
substrate having the same, and method formanufacturing semiconductor device
发明人：Tomoyuki Aoki,Takuya Tsurume,Daiki
Yamada
申请号：US11902799申请日：20070925
公开号：US20080096366A1公开日：20080424
专利附图：
摘要：A separation layer is formed over a substrate having a depressed portion, using
a silane coupling agent; a conductive layer and an insulating layer that covers theconductive layer are formed in the depressed portion over the separation layer; and asticky member is attached to the insulating layer, then the conductive layer and theinsulating layer are separated from the substrate. Alternatively, after these steps, aflexible substrate is attached to the conductive layer and the insulating layer.
申请人：Tomoyuki Aoki,Takuya Tsurume,Daiki Yamada
地址：Tochigi JP,Tochigi JP,Tochigi JP
国籍：JP,JP,JP
更多信息请下载全文后查看
因篇幅问题不能全部显示，请点此查看更多更全内容