HIGH POWER HIGH FREQUENCY DEVICE

专利名称：HIGH POWER HIGH FREQUENCY DEVICE发明人：HANS W. BECKE,ERIC F. CAVE,DANIEL

STALNITZ

申请号：US3659334D申请日：19701013公开号：US3659334A公开日：19720502

摘要：A high power frequency device such as a thyristor or transistor comprises amonolithic body consisting of an emitter assemblage laminated to a base-collectorassemblage. The emitter assemblage is a semiconductive wafer of given conductivity typehaving a plurality of mesas adjacent one surface; a high resistivity ballast layer in eachmesa; an insulating film on said one surface and around each mesa; and a layer of highconductivity material, such as heavily doped semiconductive material of oppositeconductivity type, on said insulating film over said one surface and surrounding saidmesas, the surface of said high conductivity layer being co-planar with the top of saidmesas. The base-collector assemblage is a semiconductive wafer which includes at leasttwo layers of mutually opposite conductivity types, the surface of one layer being planarand constituting a major surface of said body.

申请人：RCA CORP.

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