CMOS rectifier circuit

专利名称：CMOS rectifier circuit发明人：Gary L. Miller申请号：US07/173954申请日：19880328公开号：US04811191A公开日：19890307

摘要：Disclosed is a rectifier circuit which utilizes field effect transistors, and whichincludes current sensing resistors to adjust the drive to the field effect transistors toavoid forward biasing the intrinsic bipolar transistor in the field effect transistors tothereby avoid injecting current into the substrate where the field effect transistors areformed on a common substrate. In addition, the current sensing resistors provide a faststartup, which is achieved both in the case where the field effect transistors are formedon a common substrate as well as those implementations where the field effect

transistors do not share a common substrate. Current limiting resistors are also includedto prevent overloading the field effect transistors and injecting current into the substratewhen the field effect transistors share a common substrate.

申请人：CATALYST SEMICONDUCTOR, INC.

代理机构：Skjerven, Morrill, MacPherson, Franklin & Friel

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