Self-Aligned Barrier and Capping Layers For Interc

专利名称：Self-Aligned Barrier and Capping Layers For

Interconnects

发明人：Roy Gerald GORDON,Harish B.

BHANDARI,Yeung AU,Youbo LIN

申请号：US14793872申请日：20150708

公开号：US20150325474A1公开日：20151112

专利附图：

摘要：An interconnect structure for integrated circuits for copper wires in integratedcircuits and methods for making the same are provided. Mn, Cr, or V containing layer

forms a barrier against copper diffusing out of the wires, thereby protecting the insulatorfrom premature breakdown, and protecting transistors from degradation by copper. TheMn, Cr, or V containing layer also promotes strong adhesion between copper andinsulators, thus preserving the mechanical integrity of the devices during manufactureand use, as well as protecting against failure by electromigration of the copper duringuse of the devices and protecting the copper from corrosion by oxygen or water from itssurroundings. In forming such integrated circuits, certain embodiments of the inventionprovide methods to selectively deposit Mn, Cr, V, or Co on the copper surfaces whilereducing or even preventing deposition of Mn, Cr, V, or Co on insulator surfaces. Catalyticdeposition of copper using a Mn, Cr, or V containing precursor and an iodine or brominecontaining precursor is also provided.

申请人：President and Fellows of Harvard College

地址：Cambridge MA US

国籍：US

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