专利名称：Method of manufacturing transistors by
means of ion implantation
发明人：Michel de Brebisson,Maurice Bonis申请号：US05/767570申请日：19770210公开号：US04106954A公开日：19780815
摘要：A method of manufacturing transistors by means of ion implantation is
characterized by the implantation of a uniform extrinsic base zone, by providinbg a maskhaving at least two windows, and by the implantation of the emitter zone and then of theintrinsic active base zone via a first window, after which the implanted zones are annealed.
申请人：U.S. PHILIPS CORPORATION
代理人：Frank R. Trifari,Steven R. Biren
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