Semiconductor memory device and method of precharg

专利名称：Semiconductor memory device and method

of precharging the same with a first andsecond precharge voltage simultaneouslyapplied to a bit line

发明人：Sung Joo Ha,Young Soo Park申请号：US12981927申请日：20101230公开号：US08351274B2公开日：20130108

专利附图：

摘要：A semiconductor memory device includes a memory string coupled between a

common source line and a bit line, a page buffer configured to supply a first prechargevoltage to the bit line and to latch data corresponding to a threshold voltage level of amemory cell of the memory string, wherein the data is detected according to a shift in avoltage of the bit line, in a precharge operation, a precharge circuit configured to supplya second precharge voltage to the common source line in the precharge operation, and avoltage supply circuit configured to generate operating voltages for turning on thememory string in the precharge operation. While the first precharge voltage is suppliedfrom the page buffer to the bit line, the second precharge voltage is supplied to the bitline through the memory string.

申请人：Sung Joo Ha,Young Soo Park

地址：Gyeonggi-do KR,Seoul KR

国籍：KR,KR

代理机构：IP & T Group LLP

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