Semiconductor component arrangement comprising a t

专利名称：Semiconductor component arrangement

comprising a trench transistor

发明人：Markus Zundel,Franz Hirler,Norbert

Krischke

申请号：US11715275申请日：20070307

公开号：US20070215920A1公开日：20070920

专利附图：

摘要：Disclosed is a semiconductor component arrangement and a method forproducing a semiconductor component arrangement. The method comprises producing a

trench transistor structure with at least one trench disposed in the semiconductor bodyand with at least a gate electrode disposed in the at least one trench. An electrodestructure is disposed in at least one further trench and comprises an at least one

electrode. The at least one trench of the transistor structure and the at least one furthertrench are produced by common process steps. Furthermore, the at least one electrodeof the electrode structure and the gate electrode are produced by common processsteps.

申请人：Markus Zundel,Franz Hirler,Norbert Krischke

地址：Egmating DE,Isen DE,Munich DE

国籍：DE,DE,DE

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