专利名称：Semiconductor structure having a textured
nitride-based layer
发明人：Remigijus Gaska,Xuhong Hu,Michael Shur申请号：US10676963申请日：20031001
公开号：US20040070003A1公开日：20040415
专利附图：
摘要：A semiconductor structure having a textured nitride-based layer. The texturednitride-based layer can be formed above one or more crystalline nitride layers and asubstrate, and can be formed into any desired pattern. The semiconductor structure can
be incorporated as part of, for example, a field effect transistor, a light emitting diode, ora laser.
申请人：GASKA REMIGIJUS,HU XUHONG,SHUR MICHAEL
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