MASK ROM FABRICATION METHOD

专利名称：MASK ROM FABRICATION METHOD发明人：Kuang-Chu Chen,Cheng Tao Chen,Chung-Lung Hsu,Chun-Yao Chiu,Chin-Yung Chang

申请号：US13274857申请日：20111017

公开号：US20130095628A1公开日：20130418

专利附图：

摘要：A mask ROM fabrication method which comprises steps: sequentially forming agate dielectric layer and a first photoresist layer on a substrate; letting a light having awavelength of 365 nm pass through a first phase shift mask to photolithographicallyform on the first photoresist layer a plurality of first trenches having a width of 243-365nm; doping the substrate to form a plurality of embedded bit lines having a width of 243-365 nm; removing the first photoresist layer; sequentially forming a polysilicon layer anda second photoresist layer on the gate dielectric layer; and letting the light pass througha second phase shift mask to photolithographically form a plurality of polysilicon wordlines on the polysilicon layer. Thereby is reduced the line width of mask ROM to 243-365

nm and decreased the area of mask ROM.

申请人：Kuang-Chu Chen,Cheng Tao Chen,Chung-Lung Hsu,Chun-Yao Chiu,Chin-YungChang

地址：Hsinchu City TW,Hsinchu City TW,Hsinchu City TW,Hsinchu County TW,HsinchuCity TW

国籍：TW,TW,TW,TW,TW

更多信息请下载全文后查看