STS8050资料

Semiconductor

STS8050

NPN Silicon Transistor

Descriptions • High current application • Radio in class B push-pull operationFeature • Complementary pair with STS8550Ordering InformationType NO. STS8050MarkingSTS8050Package CodeTO-92Outline Dimensions unit : mm3.45±0.14.5±0.12.25±0.14.5±0.10.4±0.022.06±0.114.0±0.401.27 Typ.2.54 Typ.1 2 31.20±0.1 KST-9012-000

0.38PIN Connections1. Emitter2. Base3. Collector1

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STS8050

Absolute maximum ratings (Ta=25°C)

Characteristic

Collector-Base voltageCollector-Emitter voltageEmitter-Base voltageCollector currentEmitter currentCollector dissipationJunction temperatureStorage temperature

Symbol

VCBOVCEOVEBOICIEPCTjTstg

Ratings

30256800-800625150-55~150

Unit

VVVmAmAmW°C°C

Electrical Characteristics (Ta=25°C)

Characteristic

Collector-Base breakdown voltageCollector-Emitter breakdown voltageCollector cut-off currentDC current gain

Collector-Emitter saturation voltageBase-Emitter voltageTransition frequency

Collector output capacitance

Symbol

BVCBOBVCEOICBOhFE*VCE(sat)VBEfTCob

Test Condition

IC=500µA, IE=0IC=1mA, IB=0VCB=15V, IE=0VCE=1V, IC=50mAIC=500mA, IB=50mAVCE=1V, IC=500mAVCE=5V, IC=10mAVCB=10V, IE=0, f=1MHz

Min.Typ.Max.

3025-85----------12019

--503000.51.2--

Unit

VVnA-VVMHzpF

* : hFE Rank / B : 85~160, C : 120~200, D : 160~300

KST-9012-0002

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STS8050Electrical Characteristic Curves

Fig. 1 Pc - Ta

Fig. 2 IC - VBE Fig. 3 IC - VCE Fig. 4 VCE(SAT) - IC Fig. 5 hFE - IC KST-9012-0003