Beam Profiling Speed Enhancement for Scanned Beam

专利名称：Beam Profiling Speed Enhancement for

Scanned Beam Implanters

发明人：Andy M. Ray,Edward C. Eisner,Bo H.

Vanderberg

申请号：US14978120申请日：20151222

公开号：US20160189926A1公开日：20160630

专利附图：

摘要：An ion implantation system and method are provided where an ion beam istuned to a first process recipe. The ion beam is scanned along a scan plane at a first

frequency, defining a first scanned ion beam. A beam profiling apparatus is translatedthrough the first scanned ion beam and one or more properties of the first scanned ionbeam are measured across a width of the first scanned ion, thus defining a first beamprofile associated with the first scanned ion beam. The ion beam is then scanned at asecond frequency, thus defining a second scanned ion beam, wherein the secondfrequency is less than the first frequency. A second beam profile associated with thesecond scanned ion beam is determined based, at least in part, on the first beam profile.Ions are subsequently implanted into a workpiece via the second scanned ion beam.

申请人：Axcelis Technologies, Inc.

地址：Beverly MA US

国籍：US

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